Infineon Technologies - IGB03N120H2XT

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IGB03N120H2XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGB03N120H2XT
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; JESD-30 Code: R-PSSO-G2; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet IGB03N120H2XT Datasheet
In Stock829
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 9.6 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 403 ns
No. of Terminals: 2
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 16.1 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Peak Reflow Temperature (C): NOT SPECIFIED
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