SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGCC50FE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

5.5 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

FAST SPEED

e0

IGU04N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

9.5 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

IN-LINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

e3

24 ns

AIGW50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

213 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

33 ns

AEC-Q101

IGC99T120T6RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6526SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IGB15N65S5

Infineon Technologies

N-CHANNEL

SINGLE

YES

105 W

35 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

27 ns

IRGC5B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC70T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IGC168T170S8RMX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6505SAV

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

IGC70T120T8RQ

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IGC41T120T8QX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC109T120T6RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

110 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

4

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6505SA

Infineon Technologies

N-CHANNEL

SINGLE

NO

72 W

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

300 ns

BUP212

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

22 A

PLASTIC/EPOXY

MOTOR CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

120 ns

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

105 ns

IGC114T170S8RMX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1700 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IGC99T120T8RLX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.97 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IRGCH50FE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRGCC40KE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

5.5 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

ULTRA FAST SPEED

e0

IGC76T65T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1.23 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IRGAC30U

Infineon Technologies

N-CHANNEL

SINGLE

NO

17 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

ULTRA FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IGC189T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.27 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IGC28T65QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IGC99T120T6RLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6502STV

Infineon Technologies

N-CHANNEL

SINGLE

NO

10 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

700 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-257AA

e0

150 ns

IRGS4B60KTRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

40 ns

OM6517SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IRGCH50FEPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRGMC30UD

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

17 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

IRGC4056B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

S-XUUC-N2

IRG8CH76K10F

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

UNSPECIFIED

RECTANGULAR

1

555 ns

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

UNSPECIFIED

R-XXUC-N

100 ns

IRGC10B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IRGC8B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

SILICON

1200 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IRGC25B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGMC30UDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

17 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRGCC50MEPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRGC9B120KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC99T120T6RMX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC189T120T8RLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.27 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

IRGC75B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

OM6504SC

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

30 A

METAL

POWER CONTROL

200 ns

PIN/PEG

RECTANGULAR

1

2000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-258AA

e0

100 ns

IGC07T120T8L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.02 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGW75N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

IGC142T120T6RH

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

8

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGC15B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

IGC31T65QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IRGSL6B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 W

13 A

PLASTIC/EPOXY

MOTOR CONTROL

26 ns

2.2 V

THROUGH-HOLE

RECTANGULAR

1

27 ns

258 ns

3

IN-LINE

150 Cel

SILICON

600 V

63 ns

-55 Cel

20 V

282 ns

5.5 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

45 ns

IGC54T65R3QE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.