SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

AIGW50N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IGZ50N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

311 ns

4

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

27 ns

IGZ75N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

395 W

119 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

37 ns

IRGMC40FUPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IGC11T120T6LX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGMC50FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IGC18T120T8L

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGS4B60KTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

40 ns

IRGCC40KEPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IGC70T120T8RQX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IRGC4062B

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

6.5 V

UPPER

R-XUUC-N2

IRGMC30FD

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

23 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IRGC100B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC114T170S8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6517SAV

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IRGMC40FD

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IRGS4B60KTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

GULL WING

RECTANGULAR

1

89 ns

199 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

40 ns

IGB10N60T

Infineon Technologies

N-CHANNEL

SINGLE

YES

110 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

296 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

245

21 ns

IGC18T120T8LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.07 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGA30N60H3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

18 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

262 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRGMC40FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST

TO-254AA

e0

IGP20N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

218 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IGC27T120T8Q

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRG8CH184K10F

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

1015 ns

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

UNSPECIFIED

R-XXUC-N

175 ns

IGP20N65F5

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

42 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

211 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

32 ns

IGC193T120T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IRGC100B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

5.5 V

TIN LEAD

UPPER

S-XUUC-N2

Not Qualified

e0

IGC99T120T6RHX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

6

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGMC30UUPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

17 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

ULTRA FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRGMC50UU

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

IRGMC40UU

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

31 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-254AA

e0

IRGC25B120UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IGC142T120T6RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGC15B60KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

OM6506SA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

20 A

METAL

POWER CONTROL

200 ns

PIN/PEG

SQUARE

1

2000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

100 ns

IRGC16B120KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

1200 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGCC30FE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

5.5 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

FAST SPEED

e0

IRGIH50FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

6 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

FAST

TO-259AA

e0

IRGS8B60KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

140 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

26 ns

GULL WING

RECTANGULAR

1

56 ns

220 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

43 ns

IRGC49B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC15T65QEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.32 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC70T120T6RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6504SCT

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

METAL

POWER CONTROL

PIN/PEG

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-258AA

e0

100 ns

IRGC5B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

IGC18T120T8Q

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IRGC15B120KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

1200 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

IGC142T120T8RM

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.32 V

NO LEAD

RECTANGULAR

1

7

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N7

NOT SPECIFIED

NOT SPECIFIED

IRGC30B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.