SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SGP10N60A

Infineon Technologies

N-CHANNEL

SINGLE

NO

92 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

THROUGH-HOLE

RECTANGULAR

1

32 ns

224 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

SIGC15T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC06T60GSX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

296 ns

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

22 ns

SP001533562

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

57 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

638 ns

1270 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

1906 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

61 ns

SIGC06T60GS

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

296 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

22 ns

SGI02N120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

6.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

375 ns

3

IN-LINE

150 Cel

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

40 ns

SIGC156T120R2CLX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

480 ns

UNCASED CHIP

SILICON

1200 V

UPPER

S-XUUC-N

INTEGRATED GATE RESISTOR

110 ns

SIGC100T60R3EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N10

NOT SPECIFIED

NOT SPECIFIED

SIGC16T120CSX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

461 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

56 ns

SIGC25T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

135 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

SIGC186T170R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

9

UNCASED CHIP

SILICON

1700 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC08T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

291 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

32 ns

SGW10N60A

Infineon Technologies

N-CHANNEL

SINGLE

NO

92 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

THROUGH-HOLE

RECTANGULAR

1

32 ns

224 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

40 ns

SIGC104T170R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.5 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SGW15N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

138 W

31 A

PLASTIC/EPOXY

POWER CONTROL

40 ns

THROUGH-HOLE

RECTANGULAR

1

55 ns

315 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

54 ns

SIGC42T120CQX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

346 ns

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

63 ns

SP001537184

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

60 A

PLASTIC/EPOXY

1.5 V

THROUGH-HOLE

RECTANGULAR

1

570 ns

1030 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

1550 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

40 ns

SIGC81T120R2CSX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

SP001537164

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

86 ns

177 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

266 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

79 ns

SIGC81T120R2CX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

72 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

450 ns

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N

INTEGRATED GATE RESISTOR

100 ns

SIGC185T350R2CH

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

3030 ns

UNCASED CHIP

Insulated Gate BIP Transistors

125 Cel

SILICON

3500 V

20 V

5.9 V

MATTE TIN

UPPER

S-XUUC-N

Not Qualified

e3

1150 ns

SGP30N60HKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

391 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

78 ns

SP000054922

Infineon Technologies

N-CHANNEL

SINGLE

YES

333 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

328 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

55 ns

SIGC81T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

540 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

115 ns

SIGC10T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

SIGC54T60R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC39T60SE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

SIGC06T65GEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

650 V

-40 Cel

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC18T60NCX1SA6

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

135 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

SIGC41T120R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

35 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

UPPER

R-XUUC-N

Not Qualified

e0

135 ns

SIGC6T120CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

2 A

UNSPECIFIED

POWER CONTROL

21 ns

NO LEAD

RECTANGULAR

1

80 ns

321 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUUC-N2

Not Qualified

39 ns

SIGC81T120R2CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

370 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC42T120C

Infineon Technologies

N-CHANNEL

SINGLE

YES

52 A

UNSPECIFIED

POWER CONTROL

100 ns

NO LEAD

RECTANGULAR

1

60 ns

465 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

SIGC100T60R3X1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N10

Not Qualified

e3

SIGC03T60SX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

4 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

268 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

24 ns

SIGC42T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

460 ns

4

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N4

3

Not Qualified

260

95 ns

SIGC42T120CX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

52 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

465 ns

3

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N3

140 ns

SIGC15T60SE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SGB10N60AATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

224 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

40 ns

SIGC18T60NC

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

135 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

SIGC06T60GEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

25 ns

SIGC81T60NCX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

235 ns

10

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

125 ns

SIGC20T120X1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

135 ns

SIGC06T60G

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

25 ns

SIGC10T60SX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

299 ns

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

36 ns

SIGC57T120R3LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

6

UNCASED CHIP

150 Cel

SILICON

1200 V

MATTE TIN

UPPER

R-XUUC-N6

Not Qualified

e3

140 ns

SIGC25T120CX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

32 A

UNSPECIFIED

NO LEAD

RECTANGULAR

1

470 ns

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC12T120

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.