Infineon Technologies - SIGC6T120CS

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SIGC6T120CS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC6T120CS
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Body Material: UNSPECIFIED; Terminal Form: NO LEAD;
Datasheet SIGC6T120CS Datasheet
In Stock106
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 21 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 321 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 39 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum Fall Time (tf): 80 ns
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