Infineon Technologies - SIGC06T65GEX1SA1

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;

Mitsubishi Electric's CM300DU-24NFH is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Features include 1200V VCEsat, 300A IC, and 1900W power dissipation. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.

IXXX100N60B3H1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a collector current of 200A. Ideal for power control applications, it has a built-in diode, operates at temperatures up to 150°C, and features a turn-off time of 350ns.

STGF14NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 11A max collector current, and 25W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 25 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Voltage: 20 V;

IGB50N60TATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications requiring fast switching speeds. This insulated gate bipolar transistor (IGBT) comes in a surface-mount package with GULL WING terminals, ideal for high-power electronic systems operating at temperatures up to 175°C.

Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).

Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.

IRG4BC10SD-SPBF by Infineon is an N-channel IGBT with a max VCEsat of 1.8V and IC of 14A, ideal for power control applications. It has a package style of small outline, operates at temperatures from -55 to 150°C, and features a built-in diode for efficient switching performance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 96 A; Case Connection: COLLECTOR;

IRG4BC30FDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 620ns and is designed for power control applications. With a max operating temperature of 150°C, it can handle up to 31A of collector current efficiently.

Infineon FS150R12KT4 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 605ns and ton of 165ns, suitable for high-power applications. With a Vce(max) of 1200V and Tj(max) of 150°C, it's commonly used in power electronics for efficient switching operations.

IGW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.

HGTG12N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 54A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode and fast switching times (toff:180ns, tf:95ns). Suitable for high-power systems operating in temperatures ranging from -55°C to 150°C.

Mitsubishi Electric's CM500HA-34A is an N-CHANNEL IGBT with 1700V VCEsat, 500A IC, and 5000W power dissipation. Ideal for power control applications due to its high voltage and current capabilities. Rectangular package style with built-in diode makes it suitable for flange mount installations.

IXXH50N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 100A. It is commonly used for power control applications due to its high power dissipation of 600W and fast nominal turn off time (toff) of 170ns.

STGW19NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 42A IC, and 140W Ptot. It's used for power control applications due to its fast turn-off time of 272ns and built-in diode in a rectangular package with through-hole terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;

IRG4PH40UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 41A. It is used for POWER CONTROL applications, featuring a Nominal Turn Off Time of 750ns and Max Power Dissipation of 65W.

FF600R12ME4B72BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, making it ideal for POWER CONTROL applications. With a turn off time of 770ns and turn on time of 310ns, this rectangular package transistor operates at temperatures up to 175°C.