Infineon Technologies - SIGC185T350R2CH

SIGC185T350R2CH by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC185T350R2CH
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 3500 V; Transistor Application: POWER CONTROL;
Datasheet SIGC185T350R2CH Datasheet
In Stock513
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5.9 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Nominal Turn Off Time (toff): 3030 ns
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 3500 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 1150 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: S-XUUC-N
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
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