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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | SIGC185T350R2CH |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 3500 V; Transistor Application: POWER CONTROL; |
Datasheet | SIGC185T350R2CH Datasheet |
In Stock | 513 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 50 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 5.9 V |
Sub-Category: | Insulated Gate BIP Transistors |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
Nominal Turn Off Time (toff): | 3030 ns |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 3500 V |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 1150 ns |
Package Style (Meter): | UNCASED CHIP |
JESD-30 Code: | S-XUUC-N |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Maximum Operating Temperature: | 125 Cel |
Maximum Gate-Emitter Voltage: | 20 V |