SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC61T60NCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

205 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

SIGC109T120R3LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC14T60NCX1SA7

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

135 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

28 ns

SIGC42T60UNX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

370 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

79 ns

SIGC156T120R2CX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

470 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

240 ns

SIGC101T170R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

SQUARE

1

2

UNCASED CHIP

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC42T120CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

380 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

120 ns

SGB20N60E3045A

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

313 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

66 ns

SIGC144T170R2CX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

SQUARE

1

10

UNCASED CHIP

SILICON

1700 V

UPPER

S-XUUC-N10

SIGC223T120R2CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC81T60NC

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

235 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

125 ns

SIGC158T170R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

1.45 V

NO LEAD

SQUARE

1

9

UNCASED CHIP

175 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

S-XUUC-N9

NOT SPECIFIED

NOT SPECIFIED

SIGC57T120R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

SIGC06T120CSX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

2 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

321 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

39 ns

SIGC81T120R2CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

SIGC121T120R2CX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

103 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

520 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC25T120CS2

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC03T60X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

SKP20N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

30 ns

SIGC06T60

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

25 ns

SIGC11T60NCX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

130 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

28 ns

SIGC68T170R3EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

SIGC15T60UN

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

98 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

17 ns

SIGC08T60SX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

291 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

S-XUUC-N2

Not Qualified

e3

32 ns

SIGC39T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

401 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

69 ns

SIGC156T120R2CSX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

390 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

190 ns

SIGC11T60SNCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

224 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

40 ns

SGB30N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

391 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

78 ns

SIGC42T60SNCX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

460 ns

4

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

95 ns

SGP30N60HSXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

SIGC15T60EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC81T120R2CLX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

370 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

SIGC128T170R3X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

150 Cel

SILICON

1700 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC156T120R2CQX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

451 ns

10

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

274 ns

SIGC156T120R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

160 ns

NO LEAD

SQUARE

1

100 ns

470 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

S-XUUC-N10

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

240 ns

SIGC28T60SEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N3

SIGC10T60EX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC14T60SN

Infineon Technologies

N-CHANNEL

SINGLE

YES

31 A

UNSPECIFIED

MOTOR CONTROL

40 ns

NO LEAD

SQUARE

1

55 ns

280 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

57 ns

SIGC32T120R3LE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SGB10N60A

Infineon Technologies

N-CHANNEL

SINGLE

YES

92 W

20 A

PLASTIC/EPOXY

POWER CONTROL

15 ns

GULL WING

RECTANGULAR

1

32 ns

224 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

40 ns

SIGC04T60G

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

25 ns

SP000014616

Infineon Technologies

N-CHANNEL

SINGLE

YES

9.6 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

403 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

16.1 ns

SIGC42T120CS

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC32T120R3LX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC57T120R3EX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

135 ns

SGB02N120XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

6.2 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

375 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

SIGC42T120CX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

52 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

465 ns

3

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

SGW30N60HSXK

Infineon Technologies

N-CHANNEL

SINGLE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

39 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.