Infineon Technologies - SIGC04T60G

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SIGC04T60G by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC04T60G
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Terminal Position: UPPER; Maximum Gate-Emitter Voltage: 20 V;
Datasheet SIGC04T60G Datasheet
In Stock683
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 6 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 250 ns
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 25 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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