IXYS Corporation - IXXH30N65B4

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IXXH30N65B4 by IXYS Corporation

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Manufacturer IXYS Corporation
Manufacturer's Part Number IXXH30N65B4
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 65 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): 10;
Datasheet IXXH30N65B4 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 65 A
Maximum Time At Peak Reflow Temperature (s): 10
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 230 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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