Onsemi - NGTB40N120S3WG

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NGTB40N120S3WG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB40N120S3WG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 160 A; No. of Elements: 1;
Datasheet NGTB40N120S3WG Datasheet
In Stock454
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 160 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Maximum Power Dissipation (Abs): 454 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.95 V
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