Infineon Technologies - IHW30N135R5XKSA1

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IHW30N135R5XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHW30N135R5XKSA1
Description N-Channel; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 60 A; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Collector-Emitter Voltage: 1350 V;
Datasheet IHW30N135R5XKSA1 Datasheet
In Stock230
NAME DESCRIPTION
Other Names: 2156-IHW30N135R5XKSA1
IHW30N135R5XKSA1-ND
448-IHW30N135R5XKSA1
SP001607186
Maximum Collector Current (IC): 60 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 430 ns
Maximum Power Dissipation (Abs): 330 W
Maximum Collector-Emitter Voltage: 1350 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 1.95 V
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