SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SIGC16T120CL

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC12T120LE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

710000 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

66000 ns

SIGC07T60SNCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

318 ns

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

41 ns

SIGC81T120R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

72 A

UNSPECIFIED

POWER CONTROL

100 ns

NO LEAD

RECTANGULAR

1

100 ns

450 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

100 ns

SGW15N120FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

683 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

68 ns

SIGC42T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

29 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

TIN LEAD

UPPER

R-XUUC-N

Not Qualified

e0

SGW30N60HS

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

301 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

SIGC08T60X1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

SIGC42T170R3GE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

150 Cel

SILICON

1700 V

-55 Cel

20 V

6.4 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC08T60EX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC68T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC156T120R2CQ

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

451 ns

10

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

274 ns

SIGC04T60X1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

185 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

22 ns

SGB15N120AT

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

683 ns

2

SMALL OUTLINE

SILICON

1200 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

68 ns

SIGC06T65GE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.87 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.6 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC40T60R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.85 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

SGB15N120ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

683 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

68 ns

SGP10N60AXK

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

224 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

40 ns

SGP10N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

104 W

21 A

PLASTIC/EPOXY

MOTOR CONTROL

32 ns

THROUGH-HOLE

RECTANGULAR

1

59 ns

329 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

50 ns

SIGC15T60X1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

SIGC15T60S

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

382 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

e0

50 ns

SIGC15T65E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.87 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC03T60SNCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

354 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

34 ns

SIGC16T120CX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

8 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

460 ns

2

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

SIGC20T120LE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC41T120R3E

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.1 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

SIGC109T120R3L

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SGW30N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

41 A

PLASTIC/EPOXY

POWER CONTROL

58 ns

THROUGH-HOLE

RECTANGULAR

1

70 ns

391 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

SIGC18T60UN

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

100 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23.5 ns

SIGC12T60NCX1SA5

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

135 ns

2

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

SIGC81T60NCX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

235 ns

10

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N10

125 ns

SGP15N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

SIGC42T60NCX1SA4

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

160 ns

4

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N4

55 ns

SIGC76T60R3X1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N10

Not Qualified

e3

SIGC20T120

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

135 ns

SIGC223T120R2CLX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

610 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC25T60SNCX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

41 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

391 ns

3

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

78 ns

SIGC06T60X1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

10 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

250 ns

2

UNCASED CHIP

175 Cel

SILICON

600 V

MATTE TIN

UPPER

R-XUUC-N2

Not Qualified

e3

25 ns

SP000380845

Infineon Technologies

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

SILICON

1000 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

63 ns

SIGC81T60SNCX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

540 ns

10

UNCASED CHIP

150 Cel

SILICON

600 V

UPPER

S-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

115 ns

SIGC156T60NR2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

326 ns

11

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

S-XUUC-N11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

229 ns

SIGC100T60R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SIGC18T60SNC

Infineon Technologies

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

36 ns

NO LEAD

SQUARE

1

76 ns

313 ns

2

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

UPPER

S-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

66 ns

SGB15N60HS

Infineon Technologies

N-CHANNEL

SINGLE

YES

138 W

27 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

252 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

27 ns

SGB02N120

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 W

6.2 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

61 ns

375 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

245

40 ns

SIGC25T60N

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

87 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

UPPER

R-XUUC-N3

Not Qualified

36.5 ns

SIGC28T60SX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

50 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

396 ns

3

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N3

60 ns

SIGC186T170R3

Infineon Technologies

N-CHANNEL

SINGLE

YES

150 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

6.4 V

UPPER

S-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.