Infineon Technologies - SIGC16T120CL

  1. Home
  2. Infineon Technologies - SIGC16T120CL
SIGC16T120CL by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC16T120CL
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Position: UPPER; Transistor Application: MOTOR CONTROL;
Datasheet SIGC16T120CL Datasheet
In Stock579
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 8 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
579 - -

Popular Products

Category Top Products

FF900R12IP4DVBOSA1 by Infineon Technologies

FF900R12IP4DVBOSA1

Infineon Technologies

FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.
AFGHL75T65SQDT by Onsemi

AFGHL75T65SQDT

Onsemi

AFGHL75T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 174ns and a max power dissipation of 375W. This single configuration transistor operates b/w -55 to 175 °C, making it suitable for various industrial uses.
IRGP50B60PDPBF by International Rectifier

IRGP50B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Collector Current (IC): 75 A; Maximum Fall Time (tf): 65 ns;
IRG4PF50WPBF by Infineon Technologies

IRG4PF50WPBF

Infineon Technologies

IRG4PF50WPBF by Infineon Technologies is an N-CHANNEL IGBT with 900V max collector-emitter voltage, 51A max collector current, and 200W max power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 370ns and low gate-emitter threshold voltage of 6V.
IXGH32N170A by IXYS Corporation

IXGH32N170A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 32 A; Transistor Element Material: SILICON; No. of Elements: 1;
IXGN50N120C3H1 by IXYS Corporation

IXGN50N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Collector Current (IC): 95 A; Nominal Turn Off Time (toff): 485 ns;
FS100R12PT4BOSA1 by Infineon Technologies

FS100R12PT4BOSA1

Infineon Technologies

FS100R12PT4BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a max voltage of 1200V, current of 135A, and turn off time of 600ns. Ideal for POWER CONTROL applications due to its fast switching times and high current handling capabilities.
APT75GP120J by Microsemi

APT75GP120J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; JESD-30 Code: R-PUFM-X4; Package Style (Meter): FLANGE MOUNT;
SKM400GB12T4 by Semikron International

SKM400GB12T4

Semikron International

Semikron International's SKM400GB12T4 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.05V and Max Collector Current of 610A, it operates at up to 175°C. With a Max Collector-Emitter Voltage of 1200V, this UL RECOGNIZED transistor is designed for high-power systems.
IRGS14C40LPBF by Infineon Technologies

IRGS14C40LPBF

Infineon Technologies

IRGS14C40LPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 370V and a max collector current of 20A. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package style. The transistor has a max power dissipation of 125W and can operate at temperatures up to 175°C.
FF300R12ME4BOSA1 by Infineon Technologies

FF300R12ME4BOSA1

Infineon Technologies

FF300R12ME4BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 450A, and turn off time of 720ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
FF450R12IE4BOSA2 by Infineon Technologies

FF450R12IE4BOSA2

Infineon Technologies

FF450R12IE4BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and operates at up to 175°C. Ideal for POWER CONTROL applications, it features a turn off time of 900ns and a turn on time of 360ns.
APT85GR120JD60 by Microchip Technology

APT85GR120JD60

Microchip Technology

APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.
APTGT750U60D4G by Microsemi

APTGT750U60D4G

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 1000 A; Terminal Form: UNSPECIFIED;
IRG4BC30KD-SPBF by Infineon Technologies

IRG4BC30KD-SPBF

Infineon Technologies

IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
IXGH60N60C3D1 by IXYS Corporation

IXGH60N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;
HGTG20N60A4D by Intersil

HGTG20N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 70 A; Maximum Fall Time (tf): 73 ns;
FGP10N60UNDF by Fairchild Semiconductor

FGP10N60UNDF

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 139 W; Maximum Collector Current (IC): 20 A; JESD-30 Code: R-PSFM-T3;
STGY50NC60WD by STMicroelectronics

STGY50NC60WD

STMicroelectronics

STGY50NC60WD by STMicroelectronics is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It is used for power control applications, with a nominal turn off time of 271ns and a max power dissipation of 260W.
IXGN200N170 by Littelfuse

IXGN200N170

Littelfuse

IXGN200N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCEsat, 280A IC, and 1250W power dissipation. Ideal for POWER CONTROL applications, it has a toff of 1040ns and ton of 183ns.