STMicroelectronics - STGD5NB120SZT4

STGD5NB120SZT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGD5NB120SZT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
Datasheet STGD5NB120SZT4 Datasheet
In Stock4,162
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 10 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff): 14100 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 55 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 850 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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