International Rectifier - IRG4BC20UD-SPBF

IRG4BC20UD-SPBF by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRG4BC20UD-SPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Case Connection: COLLECTOR;
Datasheet IRG4BC20UD-SPBF Datasheet
In Stock964
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 13 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
Nominal Turn Off Time (toff): 320 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 55 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 170 ns
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): 260
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