Infineon Technologies - FP20R06W1E3_B11

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FP20R06W1E3_B11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FP20R06W1E3_B11
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Collector Current (IC): 27 A; Nominal Turn On Time (ton): 37 ns;
Datasheet FP20R06W1E3_B11 Datasheet
In Stock672
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 27 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 250 ns
No. of Terminals: 23
Maximum Power Dissipation (Abs): 94 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 37 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X23
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL RECOGNIZED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2 V
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