SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4CC77KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRGBC36

Infineon Technologies

N-CHANNEL

SINGLE

NO

34 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

FAST

TO-220AB

e3

IRG4BC20W-SPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

96 ns

300 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

30

260

36 ns

IRGP4062-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.95 V

THROUGH-HOLE

RECTANGULAR

1

41 ns

133 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

63 ns

IRG4BC20W-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

96 ns

300 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

36 ns

IRG4CC30KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

40

260

IRG7S313U

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

276 ns

2

SMALL OUTLINE

SILICON

330 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e0

25 ns

IRGPC40K-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

610 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

SHORT CIRCUIT RATED, ULTRA FAST

TO-247AD

e0

62 ns

IRG4CC60FB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRG4PC60FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

520 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AC

e3

105 ns

IRGP4066-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRG4PH40KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

1200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

53 ns

SGD02N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

30 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

18 ns

GULL WING

RECTANGULAR

1

63 ns

354 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

260

34 ns

IRG4CC81UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4BC40U

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG4PC50K-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

52 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AD

e3

72 ns

IRG4CC50KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

e0

IGW15N120H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

217 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

49 ns

IRG4RC20FTRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

22 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

706 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

51 ns

IGW40N65H5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

74 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

31 ns

AEC-Q101

IRG4RC20FTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

22 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

706 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

51 ns

IGW03N120H2XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

IGW30N100TXK

Infineon Technologies

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

569 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

54 ns

IGW50N65F5A

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

35 ns

AEC-Q101

IGW40N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

306 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

48 ns

IGP03N120H2

Infineon Technologies

N-CHANNEL

SINGLE

NO

62.5 W

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

IGW15T120XK

Infineon Technologies

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

85 ns

IRGPC30M-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

26 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

1190 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

61 ns

IRG4PC30S

Infineon Technologies

N-CHANNEL

SINGLE

NO

34 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1550 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

40 ns

IGW50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

IGW30N60TP

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

53 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

279 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

38 ns

IRG4BC40WSTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

110 ns

294 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

48 ns

IRG7S319U

Infineon Technologies

N-CHANNEL

SINGLE

YES

45 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

298 ns

2

SMALL OUTLINE

SILICON

330 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e0

41 ns

IRG4BH20K-S

Infineon Technologies

N-CHANNEL

SINGLE

YES

11 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

720 ns

2

SMALL OUTLINE

SILICON

1200 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e0

30

225

51 ns

SGD06N60BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

41 ns

IGW40N65H5A

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

31 ns

AEC-Q101

IRG4PC40W

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

294 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

48 ns

IRG4BC30F

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4PC40SPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

570 ns

1940 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

44 ns

IGB50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

223 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

52 ns

IRG4CC40WB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IRG4PH30K-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AD

e3

53 ns

IRGP4063PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

330 W

80 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

THROUGH-HOLE

RECTANGULAR

1

46 ns

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

100 ns

IRG4CC60UBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

IRGB6B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRG4PSC71U

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

304 ns

3

IN-LINE

SILICON

600 V

SINGLE

R-PSIP-T3

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

79 ns

IGW40N65F5

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

34 ns

IGW30N100T

Infineon Technologies

N-CHANNEL

SINGLE

NO

412 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

569 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1000 V

20 V

6.4 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

54 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.