SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4CC40SB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

STANDARD SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4PC40F-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

49 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

690 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-247AD

e3

46 ns

IRG4RC20FPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

66 W

22 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

706 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

51 ns

IRGP20B120U-EPPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

70 ns

SGP02N120

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 W

6.2 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

THROUGH-HOLE

RECTANGULAR

1

61 ns

375 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

40 ns

IRG7PG35UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

210 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

-55 Cel

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

45 ns

IRG4PSC71KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

533 ns

3

IN-LINE

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

93 ns

IRGP4069-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

268 W

76 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

54 ns

188 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

78 ns

IGW30N65L5

Infineon Technologies

N-CHANNEL

SINGLE

NO

227 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

44 ns

AUIRG4BC30S-S

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 W

34 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

590 ns

1550 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

40 ns

IGW100N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

IRG4RC10KTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

9 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

417 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

38 ns

SGP06N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

50 W

12 A

PLASTIC/EPOXY

POWER CONTROL

42 ns

THROUGH-HOLE

RECTANGULAR

1

108 ns

318 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

IRG4PC30S-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

34 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1550 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

40 ns

SGD06N60XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252AA

41 ns

IRGP4063-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

330 W

80 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

THROUGH-HOLE

RECTANGULAR

1

46 ns

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

100 ns

IGW50N65H5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

213 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

33 ns

AEC-Q101

IRG7S319UTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

45 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

298 ns

2

SMALL OUTLINE

SILICON

330 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e0

41 ns

IGW40N65F5A

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

30 ns

AEC-Q101

IRGPC40F-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

49 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

840 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e0

65 ns

IRG4MC50USCS

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

POWER CONTROL

75 ns

2.75 V

PIN/PEG

SQUARE

1

150 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

150 ns

-55 Cel

20 V

350 ns

6 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

IRG4IBC20W

Infineon Technologies

N-CHANNEL

SINGLE

NO

11.8 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRGB30B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

237 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

74 ns

SGP02N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

354 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

34 ns

IRG4BC20F

Infineon Technologies

N-CHANNEL

SINGLE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

SGP20N60

Infineon Technologies

N-CHANNEL

SINGLE

NO

178 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

46 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

313 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

66 ns

SGD06N60

Infineon Technologies

N-CHANNEL

SINGLE

YES

67 W

12 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

GULL WING

RECTANGULAR

1

65 ns

318 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

260

41 ns

AUIRG4BC30U-SL

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

320 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

33 ns

IRGPH30M

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST, SHORT CIRCUIT RATED

TO-247AC

e3

IRG4PC60F-P

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

105 ns

IRG4BAC50WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

55 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

272 ns

3

IN-LINE

150 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-273AA

NOT SPECIFIED

NOT SPECIFIED

74 ns

IRG4PC30W

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

41 ns

IRG4PC50S-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1700 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

STANDARD SPEED

TO-247AD

e3

62 ns

IGW50N65F5FKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

IRG4BC40WSTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

110 ns

294 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

48 ns

AUIRGS30B60KTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

370 W

78 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

GULL WING

RECTANGULAR

1

42 ns

237 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

74 ns

AUIRGS30B60K

Infineon Technologies

N-CHANNEL

SINGLE

YES

370 W

78 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

GULL WING

RECTANGULAR

1

42 ns

237 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

260

74 ns

IRG4MC30FUPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

28 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-MSFM-P3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

IRG4IBC30S

Infineon Technologies

N-CHANNEL

SINGLE

NO

23.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

1550 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

40 ns

IGW40T120

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

92 ns

IGP40N65F5

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

34 ns

IRG7PH35UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

210 W

55 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

THROUGH-HOLE

RECTANGULAR

1

105 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

45 ns

IRG4PC60U

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IGW50N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

333 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

297 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

54 ns

IRG4CC30UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

e0

IRG4CF50WB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

900 V

6 V

UPPER

O-XUUC-N

1

Not Qualified

IRG7S313UTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

78 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

276 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

30 V

4.7 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

25 ns

AUIRG4PC40S-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.5 V

THROUGH-HOLE

RECTANGULAR

1

570 ns

1030 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

1550 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

40 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.