SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

GT50J101

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

200 W

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

GT50J123

Toshiba

N-CHANNEL

SINGLE

NO

230 W

59 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

250 ns

GT25Q101

Toshiba

N-CHANNEL

SINGLE

NO

200 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

800 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

300 ns

GT8J101

Toshiba

N-CHANNEL

SINGLE

NO

30 W

8 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

30 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

TO-220AB

e0

400 ns

MG150Q1BS11

Toshiba

N-CHANNEL

SINGLE

150 A

1

SILICON

1200 V

Not Qualified

GT30J122A

Toshiba

N-CHANNEL

SINGLE

NO

120 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

500 ns

S5978

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X3

Not Qualified

HIGH SPEED

GT50G102

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1800 ns

3

FLANGE MOUNT

SILICON

400 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG25J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

125 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

400 ns

GT50Q101

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

300 W

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

MG25Q1BS1

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X3

Not Qualified

HIGH SPEED

GT15N101

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

MG15H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

SOLDER LUG

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-D3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT60J323H

Toshiba

N-CHANNEL

SINGLE

NO

170 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

210 ns

530 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

650 ns

MG50Q1BS1

Toshiba

N-CHANNEL

SINGLE

NO

300 W

50 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X3

Not Qualified

HIGH SPEED

GT45G131

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

360 ns

2

SMALL OUTLINE

150 Cel

SILICON

400 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

160 ns

S6X06B(ANSD,Q)

Toshiba

N-CHANNEL

SINGLE

YES

5000 W

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

ROUND

1

9000 ns

4

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

1500 ns

S5J17M

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T2

COLLECTOR

Not Qualified

HIGH SPEED

TO-220

GT45F123

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

290 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

230 ns

GT25J102

Toshiba

N-CHANNEL

SINGLE

NO

80 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

80 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

GT40T101

Toshiba

N-CHANNEL

SINGLE

NO

200 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1000 ns

5 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

1500 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MP7001

Toshiba

N-CHANNEL

SINGLE

NO

37 W

30 A

PLASTIC/EPOXY

2.7 V

THROUGH-HOLE

RECTANGULAR

1

510 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T7

Not Qualified

590 ns

GT25H101

Toshiba

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

500 ns

MG75J1SB11

Toshiba

N-CHANNEL

SINGLE

75 A

1

SILICON

600 V

Not Qualified

GT8N101

Toshiba

N-CHANNEL

SINGLE

NO

8 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

1000 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

200 ns

MG50H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

600 ns

MG100H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

800 ns

GT20D201-O

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

2.4 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

GT15J103(SM)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

GULL WING

RECTANGULAR

1

350 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

70 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

400 ns

GT25G102(SM)

Toshiba

N-CHANNEL

SINGLE

YES

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

GULL WING

RECTANGULAR

1

6000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

S6X06

Toshiba

N-CHANNEL

SINGLE

YES

5000 W

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

ROUND

1

9000 ns

4

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

1500 ns

GT15G101

Toshiba

N-CHANNEL

SINGLE

NO

2 W

15 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

40 W

150 Cel

SILICON

400 V

25 V

7 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

MG75N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

500 ns

GT40J121

Toshiba

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

250 ns

MG50J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

150 W

50 A

UNSPECIFIED

MOTOR CONTROL

800 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT60M105

Toshiba

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

900 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

500 ns

GT25J101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

GT25G101

Toshiba

N-CHANNEL

SINGLE

NO

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

4500 ns

3

IN-LINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

25 V

7 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

150 ns

GT20G102

Toshiba

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

IN-LINE

Insulated Gate BIP Transistors

60 W

150 Cel

SILICON

400 V

20 V

5 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

MG15N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

2SH31

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1100 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

1000 ns

GN12050E

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

RJP30K3DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

330 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

120 ns

RJP65T54DPM-A0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

63.5 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.68 V

THROUGH-HOLE

RECTANGULAR

1

284 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

53 ns

CT20VS-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP30E3DPK-M0-T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

160 ns

RJP30E2DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

25 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

130 ns

2SH28

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

750 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

380 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.