Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
3 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1000 W |
320 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1870 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-264AA |
e1 |
10 |
260 |
139 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
300 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
GULL WING |
RECTANGULAR |
1 |
187 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
45 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
38 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
122 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
36 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
344 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
45 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
8 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
1220 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1000 V |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
45 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
160 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
46 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
920 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1700 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
90 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
940 W |
310 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
93 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
S-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
124 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
300 V |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
104 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
230 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1545 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
4500 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
ISOLATED |
632 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
54 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
450 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
FAST |
TO-263AB |
e3 |
10 |
260 |
25 ns |
||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
375 W |
85 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
525 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
53 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
420 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
124 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
230 W |
58 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
271 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
39 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
390 W |
72 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
460 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
52 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
SILICON |
300 V |
UPPER |
S-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
187 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
45 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
GULL WING |
RECTANGULAR |
1 |
1630 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
10 |
260 |
162 ns |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
780 W |
280 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
520 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
123 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
1000 V |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
250 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
330 ns |
4 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
LOW CONDUCTION LOSS |
110 ns |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
300 W |
150 Cel |
SILICON |
1600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH VOLTAGE BIMOSFET |
TO-247AD |
e3 |
10 |
260 |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
SILICON |
PURE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
246 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
400 ns |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
47 ns |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
150 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
190 ns |
470 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
TO-263AB |
e0 |
43 ns |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
375 W |
68 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
286 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
50 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
331 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
580 ns |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
53 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1630 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1000 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
162 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
1000 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
2300 W |
550 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
137 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1250 W |
230 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
180 ns |
760 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
112 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
180 W |
36 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
61 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
2300 W |
600 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
435 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
155 ns |
||||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
230 W |
58 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
271 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
39 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
32 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
315 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
360 W |
160 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
UNSPECIFIED |
RECTANGULAR |
1 |
885 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
NICKEL |
UPPER |
R-PUFM-X4 |
ISOLATED |
LOW CONDUCTION LOSS |
61 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
300 W |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
450 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e3 |
100 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1150 W |
188 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
265 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-264AA |
e1 |
10 |
260 |
122 ns |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
SQUARE |
1 |
2 |
UNCASED CHIP |
SILICON |
600 V |
UPPER |
S-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
240 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1365 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
105 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
2 |
UNCASED CHIP |
SILICON |
300 V |
UPPER |
R-XUUC-N2 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
1250 W |
260 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
1300 ns |
1045 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
109 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
830 W |
170 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
720 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1700 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-264AA |
e1 |
10 |
260 |
285 ns |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
650 W |
175 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
910 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
6.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-268AA |
53 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.