SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IXGD60N60-7X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXGK320N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

1000 W

320 A

PLASTIC/EPOXY

POWER CONTROL

1.3 V

THROUGH-HOLE

RECTANGULAR

1

1870 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

139 ns

IXGA48N60C3-TRL

Littelfuse

N-CHANNEL

SINGLE

YES

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

187 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

45 ns

IXYP15N65C3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

122 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

36 ns

IXGP50N33TBM-A

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

344 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

45 ns

IXGA4N100

Littelfuse

N-CHANNEL

SINGLE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1220 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

IXYP10N65C3

Littelfuse

N-CHANNEL

SINGLE

NO

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

46 ns

IXGV32N170

Littelfuse

N-CHANNEL

SINGLE

YES

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

920 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

90 ns

IXXK160N65B4

Littelfuse

N-CHANNEL

SINGLE

NO

940 W

310 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

93 ns

IXGD32N60A-57

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGA9289

Littelfuse

N-CHANNEL

SINGLE

YES

120 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

124 ns

2

SMALL OUTLINE

150 Cel

SILICON

300 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

104 ns

IXYF30N450

Littelfuse

N-CHANNEL

SINGLE

NO

230 W

23 A

PLASTIC/EPOXY

POWER CONTROL

3.9 V

THROUGH-HOLE

RECTANGULAR

1

1545 ns

3

IN-LINE

150 Cel

SILICON

4500 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

632 ns

IXGA7N60B

Littelfuse

N-CHANNEL

SINGLE

YES

54 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

450 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

FAST

TO-263AB

e3

10

260

25 ns

IXYP24N100A4

Littelfuse

N-CHANNEL

SINGLE

NO

375 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

525 ns

3

FLANGE MOUNT

175 Cel

SILICON

1000 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

53 ns

IXGX120N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

124 ns

IXYA20N65B3

Littelfuse

N-CHANNEL

SINGLE

YES

230 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

271 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

39 ns

ITF48IF1200HR

Littelfuse

N-CHANNEL

SINGLE

NO

390 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

SINGLE

R-PSFM-T3

ISOLATED

52 ns

UL RECOGNIZED

IXGD40N30A-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

300 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGP48N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

45 ns

IXGA20N100A3

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

GULL WING

RECTANGULAR

1

1630 ns

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

162 ns

IXGX120N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

780 W

280 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

123 ns

IXGA15N100B

Littelfuse

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

150 Cel

SILICON

1000 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

IXYN150N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

250 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

1

330 ns

4

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

110 ns

UL RECOGNIZED

IXBH40N160A

Littelfuse

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

6 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

300 W

150 Cel

SILICON

1600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH VOLTAGE BIMOSFET

TO-247AD

e3

10

260

IXGP20N30

Littelfuse

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

PURE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IXGP48N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

48 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

47 ns

IXGA15N120C

Littelfuse

N-CHANNEL

SINGLE

YES

150 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

190 ns

470 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

e0

43 ns

IXYP20N120C4

Littelfuse

N-CHANNEL

SINGLE

NO

375 W

68 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

286 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

50 ns

IXGP30N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

331 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

580 ns

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

53 ns

IXGP20N100A3

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

1630 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

162 ns

IXGD12N100A-33

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

1000 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXXK300N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

550 A

PLASTIC/EPOXY

POWER CONTROL

1.6 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

137 ns

IXGX82N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

230 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

THROUGH-HOLE

RECTANGULAR

1

180 ns

760 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

112 ns

IXGP20N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

180 W

36 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

61 ns

IXGD24N60A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXYK300N65A3

Littelfuse

N-CHANNEL

SINGLE

NO

2300 W

600 A

PLASTIC/EPOXY

POWER CONTROL

1.6 V

THROUGH-HOLE

RECTANGULAR

1

435 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

155 ns

IXYP20N65B3

Littelfuse

N-CHANNEL

SINGLE

NO

230 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

271 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

39 ns

IXDP20N60B

Littelfuse

N-CHANNEL

SINGLE

NO

32 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

IXGN72N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

360 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

UNSPECIFIED

RECTANGULAR

1

885 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

61 ns

UL RECOGNIZED

IXGJ50N60B

Littelfuse

N-CHANNEL

SINGLE

NO

300 W

75 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

450 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e3

100 ns

IXYK100N120C3

Littelfuse

N-CHANNEL

SINGLE

NO

1150 W

188 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

265 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

122 ns

IXGD50N60A-77

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGD30N60B-5X

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

SQUARE

1

2

UNCASED CHIP

SILICON

600 V

UPPER

S-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGX120N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

240 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

1365 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

105 ns

IXGD28N30A-43

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

300 V

UPPER

R-XUUC-N2

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

IXGX82N120A3

Littelfuse

N-CHANNEL

SINGLE

NO

1250 W

260 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

1300 ns

1045 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

109 ns

IXGK100N170

Littelfuse

N-CHANNEL

SINGLE

NO

830 W

170 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-264AA

e1

10

260

285 ns

IXYT55N120A4HV

Littelfuse

N-CHANNEL

SINGLE

YES

650 W

175 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

910 ns

2

SMALL OUTLINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-268AA

53 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.