Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
140 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
55 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
30 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
240 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
360 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
160 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
130 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
178.5 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
90 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
40 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
55 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
25 W |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
630 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
80 ns |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
150 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
40 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
55 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
300 A |
UNSPECIFIED |
POWER AMPLIFIER |
2 V |
NO LEAD |
SQUARE |
1 |
920 ns |
5 |
UNCASED CHIP |
175 Cel |
SILICON |
1250 V |
30 V |
6.8 V |
UPPER |
S-XUUC-N5 |
NOT SPECIFIED |
NOT SPECIFIED |
165 ns |
||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
50 W |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
360 V |
30 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
130 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
35 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
45 W |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
25 W |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
360 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
130 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
30 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
150 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
630 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
90 ns |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
710 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
370 ns |
||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
100 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
300 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
Not Qualified |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
680 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
355 ns |
||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
178.5 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
90 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
200 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
200 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
1600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
100 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
90 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
50 W |
35 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
230 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
360 V |
30 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
130 ns |
||||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
.45 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
50 mA |
THROUGH-HOLE |
RECTANGULAR |
1 |
900 ns |
3 |
FLANGE MOUNT |
Unijunction Transistors |
SILICON |
600 V |
TIN LEAD |
.58 |
SINGLE |
R-PSFM-T3 |
Not Qualified |
.75 |
4.5 kohm |
TO-220AB |
e0 |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE |
NO |
60 W |
18 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
52 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
885 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-247AD |
e1 |
10 |
260 |
61 ns |
UL RECOGNIZED |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
246 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
400 ns |
5.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
LOW CONDUCTION LOSS |
e1 |
10 |
260 |
47 ns |
UL RECOGNIZED |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
110 ns |
132 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
240 ns |
5.5 V |
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
SINGLE |
R-PSIP-T3 |
ISOLATED |
e1 |
64 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
428 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
270 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
89 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
170 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
259 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
300 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
103 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
190 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
630 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
43 ns |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
265 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
410 ns |
5 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
ISOLATED |
77 ns |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
500 W |
240 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
203 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
300 V |
20 V |
5 V |
PURE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
133 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
47 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
490 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSFM-T3 |
ISOLATED |
e1 |
10 |
260 |
66 ns |
UL RECOGNIZED |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
340 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
600 ns |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
e1 |
10 |
260 |
77 ns |
UL RECOGNIZED |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
6 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
271 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
91 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
200 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
570 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
ISOLATED |
Not Qualified |
e1 |
10 |
260 |
55 ns |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
75 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
SILICON |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e1 |
10 |
260 |
|||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
550 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e3 |
63 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
223 W |
250 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
120 ns |
229 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
300 V |
-55 Cel |
20 V |
5 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
e3 |
10 |
260 |
43 ns |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
600 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
GULL WING |
RECTANGULAR |
1 |
320 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
Matte Tin (Sn) |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
10 |
260 |
75 ns |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
54 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
250 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
450 ns |
5.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
19 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
565 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
43 ns |
|||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
YES |
UNSPECIFIED |
NO LEAD |
RECTANGULAR |
1 |
5 |
UNCASED CHIP |
SILICON |
1200 V |
UPPER |
R-XUUC-N5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE |
NO |
600 W |
120 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
75 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.