SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

CT20VM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

RJP60D0DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

140 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

Not Qualified

55 ns

RJP30E3DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

160 ns

CY20AAJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

130 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

RJP6085DPN-00-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

90 ns

RJP60D0DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

55 ns

RJP63K2DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

25 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

80 ns

2SH21

Renesas Electronics

N-CHANNEL

SINGLE

NO

150 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

RJP60D0DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

55 ns

RJP1CS27DWS-80#W0

Renesas Electronics

N-CHANNEL

SINGLE

YES

300 A

UNSPECIFIED

POWER AMPLIFIER

2 V

NO LEAD

SQUARE

1

920 ns

5

UNCASED CHIP

175 Cel

SILICON

1250 V

30 V

6.8 V

UPPER

S-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

165 ns

CT20ASJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP30E2DPK-M0#T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

130 ns

RJP60D0DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

CT40KM-8H

Renesas Electronics

N-CHANNEL

SINGLE

NO

45 W

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

CT30VM-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

RJP30E2DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

25 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

130 ns

RJP63F3DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

30 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

630 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

90 ns

2SH27

Renesas Electronics

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

370 ns

GN6020C

Renesas Electronics

N-CHANNEL

SINGLE

NO

100 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

300 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSIP-T3

Not Qualified

2SH26

Renesas Electronics

N-CHANNEL

SINGLE

NO

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

680 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

355 ns

RJP6085DPN-00#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

90 ns

CT40TMH-8

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SH16

Renesas Electronics

N-CHANNEL

SINGLE

NO

200 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

1600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

e0

RJK6085DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

90 ns

CT25ASJ-8

Renesas Electronics

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

RJP30E2DPK-M0-T0

Renesas Electronics

N-CHANNEL

SINGLE

NO

50 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

130 ns

2SH11

Renesas Electronics

N-CHANNEL

SINGLE

NO

.45 W

10 A

PLASTIC/EPOXY

POWER CONTROL

50 mA

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

Unijunction Transistors

SILICON

600 V

TIN LEAD

.58

SINGLE

R-PSFM-T3

Not Qualified

.75

4.5 kohm

TO-220AB

e0

2SH18

Renesas Electronics

N-CHANNEL

SINGLE

NO

60 W

18 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IXGR72N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

52 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

885 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247AD

e1

10

260

61 ns

UL RECOGNIZED

IXGR48N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

246 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

400 ns

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

LOW CONDUCTION LOSS

e1

10

260

47 ns

UL RECOGNIZED

IXGR72N60C3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

132 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

240 ns

5.5 V

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

SINGLE

R-PSIP-T3

ISOLATED

e1

64 ns

IXGQ90N27PB

Littelfuse

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

FLANGE MOUNT

150 Cel

SILICON

270 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e3

89 ns

IXGQ170N30PB

Littelfuse

N-CHANNEL

SINGLE

NO

170 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

259 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

103 ns

IXGQ20N120B

Littelfuse

N-CHANNEL

SINGLE

NO

190 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

43 ns

IXGR35N120C

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

4 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

265 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

410 ns

5 V

TIN LEAD

SINGLE

R-PSIP-T3

ISOLATED

77 ns

UL RECOGNIZED

IXGQ240N30PB

Littelfuse

N-CHANNEL

SINGLE

NO

500 W

240 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

20 V

5 V

PURE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

133 ns

IXGR64N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

490 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

ISOLATED

e1

10

260

66 ns

UL RECOGNIZED

IXGR35N120B

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

340 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

600 ns

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

77 ns

UL RECOGNIZED

IXGQ6N170AM

Littelfuse

N-CHANNEL

SINGLE

NO

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

271 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

91 ns

IXGR40N60B

Littelfuse

N-CHANNEL

SINGLE

NO

200 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

10

260

55 ns

IXGR45N120

Littelfuse

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

SILICON

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e1

10

260

IXGQ28N120B

Littelfuse

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

550 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

63 ns

IXGA42N30C3

Littelfuse

N-CHANNEL

SINGLE

YES

223 W

250 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

120 ns

229 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXXA50N60B3

Littelfuse

N-CHANNEL

SINGLE

YES

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

GULL WING

RECTANGULAR

1

320 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

10

260

75 ns

IXGP7N60B

Littelfuse

N-CHANNEL

SINGLE

NO

54 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

250 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

19 ns

IXGP15N120B2

Littelfuse

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

IXGD25N120-5T

Littelfuse

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXXP50N60B3

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

120 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

75 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.