RJP60D0DPM-00-T1 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	RJP60D0DPM-00-T1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 45 A; Package Shape: RECTANGULAR;
Datasheet	RJP60D0DPM-00-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	45 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Nominal Turn Off Time (toff):	160 ns
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	40 W
Maximum Collector-Emitter Voltage:	600 V
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	55 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	30 V
Case Connection:	ISOLATED

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