Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
640 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
53 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SPEED |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
YES |
200 A |
UNSPECIFIED |
POWER CONTROL |
NO LEAD |
SQUARE |
1 |
1220 ns |
3 |
UNCASED CHIP |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
30 V |
7.5 V |
UPPER |
S-XUUC-N3 |
Not Qualified |
330 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
318 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE |
NO |
35 A |
UNSPECIFIED |
POWER CONTROL |
PIN/PEG |
SQUARE |
1 |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
S-XSFM-P3 |
ISOLATED |
TO-254AA |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
156 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
410 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
25 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
230 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X3 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
50 A |
1 |
SILICON |
1500 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
25 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
6000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
75 W |
150 Cel |
SILICON |
400 V |
20 V |
5 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
75 W |
25 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
4500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
75 W |
150 Cel |
SILICON |
400 V |
25 V |
7 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
150 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
800 ns |
3 |
FLANGE MOUNT |
SILICON |
900 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
350 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
900 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
500 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
8 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
100 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1100 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
450 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
10 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
4500 ns |
3 |
FLANGE MOUNT |
SILICON |
400 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
150 ns |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
250 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
800 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
700 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
250 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
60 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
6000 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
60 W |
150 Cel |
SILICON |
400 V |
25 V |
7 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
900 ns |
3 |
FLANGE MOUNT |
SILICON |
1400 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
300 ns |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25879 W |
3000 A |
UNSPECIFIED |
MOTOR CONTROL |
3.2 V |
UNSPECIFIED |
ROUND |
1 |
15000 ns |
4 |
DISK BUTTON |
150 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
UNSPECIFIED |
O-XXDB-X4 |
HIGH RELIABILITY |
850 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
100 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
100 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
60 A |
1 |
SILICON |
900 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
2 |
FLANGE MOUNT |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSFM-T2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220 |
e0 |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
10 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
4500 ns |
3 |
FLANGE MOUNT |
SILICON |
400 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
150 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
180 W |
20 A |
PLASTIC/EPOXY |
POWER AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
250 V |
20 V |
3.6 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
200 W |
75 A |
UNSPECIFIED |
MOTOR CONTROL |
800 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
1000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
25 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
1200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
SILICON |
500 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
90 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
3.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
90 W |
150 Cel |
SILICON |
900 V |
25 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH SPEED |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
5 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
2000 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
400 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e0 |
900 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
35 W |
15 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
35 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
60 A |
1 |
SILICON |
900 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1500 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
450 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
1000 ns |
3 |
FLANGE MOUNT |
SILICON |
900 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
200 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
500 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
240 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
150 W |
8 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
GULL WING |
RECTANGULAR |
1 |
350 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
50 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
300 W |
100 A |
UNSPECIFIED |
MOTOR CONTROL |
800 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
1000 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
300 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
UPPER |
R-XUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
320 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
300 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
220 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
600 ns |
3.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
200 W |
150 Cel |
SILICON |
900 V |
25 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
60 W |
150 Cel |
SILICON |
400 V |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
100 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
540 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
25 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
430 ns |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
YES |
60 W |
20 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
500 ns |
8 V |
GULL WING |
RECTANGULAR |
1 |
6000 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
60 W |
150 Cel |
SILICON |
400 V |
25 V |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.