SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4PH30K

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

53 ns

IRG4PC40U

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SPEED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

49 ns

AUIRG7CH80K6B-M

Infineon Technologies

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

NO LEAD

SQUARE

1

1220 ns

3

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

7.5 V

UPPER

S-XUUC-N3

Not Qualified

330 ns

SGP06N60XKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

318 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

IRG4MC50USCV

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

GT50J122

Toshiba

N-CHANNEL

SINGLE

NO

156 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

260 ns

410 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

230 ns

S5979

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X3

Not Qualified

HIGH SPEED

GT50T101

Toshiba

N-CHANNEL

SINGLE

50 A

1

SILICON

1500 V

Not Qualified

GT25G102

Toshiba

N-CHANNEL

SINGLE

NO

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

IN-LINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

20 V

5 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

GT25G101(SM)

Toshiba

N-CHANNEL

SINGLE

YES

75 W

25 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

GULL WING

RECTANGULAR

1

6000 ns

4500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

75 W

150 Cel

SILICON

400 V

25 V

7 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

150 ns

GT50M101

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

900 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

350 ns

MG25H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

500 ns

GT8Q101

Toshiba

N-CHANNEL

SINGLE

NO

150 W

8 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

100 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

MG50N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1100 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

450 ns

GT10G102

Toshiba

N-CHANNEL

SINGLE

NO

10 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

4500 ns

3

FLANGE MOUNT

SILICON

400 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

150 ns

GT20D101-Y

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MG75H1BS1

Toshiba

N-CHANNEL

SINGLE

NO

75 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

800 ns

3

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

700 ns

GT20D101-O

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

GT20G101

Toshiba

N-CHANNEL

SINGLE

NO

60 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3

IN-LINE

Insulated Gate BIP Transistors

60 W

150 Cel

SILICON

400 V

25 V

7 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

GT50S101

Toshiba

N-CHANNEL

SINGLE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

SILICON

1400 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT30J122(Q)

Toshiba

N-CHANNEL

SINGLE

NO

75 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

300 ns

ST3000GXH31A

Toshiba

N-CHANNEL

SINGLE

NO

25879 W

3000 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

ROUND

1

15000 ns

4

DISK BUTTON

150 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

HIGH RELIABILITY

850 ns

GT15J101

Toshiba

N-CHANNEL

SINGLE

NO

100 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

100 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

GT60M103

Toshiba

N-CHANNEL

SINGLE

60 A

1

SILICON

900 V

Not Qualified

S5J14M

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T2

COLLECTOR

Not Qualified

HIGH SPEED

TO-220

e0

GT10G101

Toshiba

N-CHANNEL

SINGLE

NO

10 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

4500 ns

3

FLANGE MOUNT

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

150 ns

GT20D201-Y

Toshiba

N-CHANNEL

SINGLE

NO

180 W

20 A

PLASTIC/EPOXY

POWER AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

250 V

20 V

3.6 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MG75J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

200 W

75 A

UNSPECIFIED

MOTOR CONTROL

800 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT30J122

Toshiba

N-CHANNEL

SINGLE

NO

75 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

300 ns

GT60J101

Toshiba

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

MG25Q1BS11

Toshiba

N-CHANNEL

SINGLE

NO

150 W

25 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT15H101

Toshiba

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

SILICON

500 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT40M101

Toshiba

N-CHANNEL

SINGLE

NO

90 W

40 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.7 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

90 W

150 Cel

SILICON

900 V

25 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

e0

GT5G101

Toshiba

N-CHANNEL

SINGLE

NO

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2000 ns

3

IN-LINE

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

900 ns

GT15J102

Toshiba

N-CHANNEL

SINGLE

NO

35 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

35 W

150 Cel

SILICON

600 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

e0

400 ns

GT60M102

Toshiba

N-CHANNEL

SINGLE

60 A

1

SILICON

900 V

Not Qualified

GT40T102

Toshiba

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

150 Cel

SILICON

1500 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

450 ns

GT60M101

Toshiba

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

900 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT80J101A

Toshiba

N-CHANNEL

SINGLE

NO

200 W

80 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

500 ns

GT30J126

Toshiba

N-CHANNEL

SINGLE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

240 ns

MG25N1BS1

Toshiba

N-CHANNEL

SINGLE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT8J102(SM)

Toshiba

N-CHANNEL

SINGLE

YES

150 W

8 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

50 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

MG100J1BS11

Toshiba

N-CHANNEL

SINGLE

NO

300 W

100 A

UNSPECIFIED

MOTOR CONTROL

800 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

1000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

300 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

HIGH SPEED

400 ns

GT45F131

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

320 ns

2

SMALL OUTLINE

150 Cel

SILICON

300 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

220 ns

GT60M104

Toshiba

N-CHANNEL

SINGLE

NO

150 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.7 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

900 V

25 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

GT20G102(SM)

Toshiba

N-CHANNEL

SINGLE

YES

60 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

GULL WING

RECTANGULAR

1

6000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

60 W

150 Cel

SILICON

400 V

20 V

5 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

GT40G121

Toshiba

N-CHANNEL

SINGLE

NO

100 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

540 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

430 ns

GT20G101(SM)

Toshiba

N-CHANNEL

SINGLE

YES

60 W

20 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

500 ns

8 V

GULL WING

RECTANGULAR

1

6000 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

60 W

150 Cel

SILICON

400 V

25 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.