Toshiba - GT20G102(SM)

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GT20G102(SM) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT20G102(SM)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Terminal Form: GULL WING;
Datasheet GT20G102(SM) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 20 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 500 ns
Transistor Application: GENERAL PURPOSE SWITCHING
Maximum Gate-Emitter Threshold Voltage: 5 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 60 W
Maximum Fall Time (tf): 6000 ns
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 400 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 8 V
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