SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4BC30U-STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

150 ns

320 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

33 ns

IRGP4760-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

130 ns

SGD02N60XT

Infineon Technologies

N-CHANNEL

SINGLE

YES

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

354 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

34 ns

IRG4BAC50S

Infineon Technologies

N-CHANNEL

SINGLE

NO

78 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

1700 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-273AA

e3

62 ns

IRG4BH20K-L

Infineon Technologies

N-CHANNEL

SINGLE

NO

11 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

IN-LINE

SILICON

1200 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST, LOW CONDUCTION LOSS

TO-262AA

e0

51 ns

IRG4RC10KTRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

9 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

417 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

38 ns

IRG4PC40S

Infineon Technologies

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1940 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

STANDARD SPEED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

44 ns

IGW30N60TXK

Infineon Technologies

N-CHANNEL

SINGLE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

FAST SWITCHING

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

50 ns

IRG4CC50FB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

FAST SPEED

e0

IRG4PH50U

Infineon Technologies

N-CHANNEL

SINGLE

NO

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS, ULTRA FAST SWITCHING

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

49 ns

IRG4PC40U-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SPEED

TO-247AD

e3

49 ns

IRG4CC20KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

ULTRA FAST SPEED

40

260

IRG4PC50U-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SPEED

TO-247AD

e3

54 ns

IRG4BC20W-S

Infineon Technologies

N-CHANNEL

SINGLE

YES

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

30

225

36 ns

IRG4MC30F

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

28 A

UNSPECIFIED

POWER CONTROL

30 ns

PIN/PEG

SQUARE

1

550 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRG7S313UTRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

276 ns

2

SMALL OUTLINE

SILICON

330 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e0

25 ns

SGP07N120

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

16.5 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

THROUGH-HOLE

RECTANGULAR

1

61 ns

520 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

56 ns

IRGP4790-EPBF

Infineon Technologies

N-Channel

SINGLE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

160 ns

SGP07N120HKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

16.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

56 ns

SGP06N60HKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

318 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

41 ns

IRG4BC20W-STRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

96 ns

300 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

36 ns

IGB50N65S5

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

215 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

51 ns

IRGPC40S-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

50 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.8 V

THROUGH-HOLE

RECTANGULAR

1

1100 ns

2800 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

2600 ns

5.5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e0

82 ns

IRG4BC40WS

Infineon Technologies

N-CHANNEL

SINGLE

YES

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

294 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e0

30

225

48 ns

IRGB6B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRG4PC30K

Infineon Technologies

N-CHANNEL

SINGLE

NO

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

54 ns

IRGPC30S-EPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

34 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2700 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

STANDARD SPEED

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

61 ns

IGZ100N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

161 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

40 ns

IRG4BH20K-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 W

11 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

400 ns

720 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

51 ns

IGW50N65F5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

35 ns

AEC-Q101

IRG4CC58KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4MC30FU

Infineon Technologies

N-CHANNEL

SINGLE

NO

28 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

e0

IRGP4055PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

255 W

110 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

IGP03N120H2HKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

16.1 ns

IGW03N120H2

Infineon Technologies

N-CHANNEL

SINGLE

NO

62.5 W

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

16.1 ns

IRG4CC81KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4CC70UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4PSC71K

Infineon Technologies

N-CHANNEL

SINGLE

NO

85 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

533 ns

3

IN-LINE

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

93 ns

IRGB4B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

63 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

THROUGH-HOLE

RECTANGULAR

1

89 ns

199 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRG4BH20K-SPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

60 W

11 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

400 ns

720 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

51 ns

IRG4PSC71UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

350 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

130 ns

304 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

79 ns

IRG4PC40UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

40 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

49 ns

IRG4PH50K

Infineon Technologies

N-CHANNEL

SINGLE

NO

45 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

660 ns

3

FLANGE MOUNT

200 W

150 Cel

SILICON

1200 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

64 ns

IRG4PC40K

Infineon Technologies

N-CHANNEL

SINGLE

NO

42 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

48 ns

IRG7S319UTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

96 W

45 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

298 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

330 V

30 V

4.7 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

41 ns

IRG4PH50S

Infineon Technologies

N-CHANNEL

SINGLE

NO

57 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2170 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRG4BC20S

Infineon Technologies

N-CHANNEL

SINGLE

NO

19 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1540 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

38 ns

SGD04N60BUMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

9.4 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

368 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

38 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.