IRG4MC30F by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRG4MC30F
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 28 A; Maximum Gate-Emitter Threshold Voltage: 6 V;
Datasheet	IRG4MC30F Datasheet
In Stock	120

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	28 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	30 ns
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	75 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	S-XSFM-P3
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Fall Time (tf):	550 ns
JEDEC-95 Code:	TO-254AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
120	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;

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