SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRG4BC20W

Infineon Technologies

N-CHANNEL

SINGLE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRGB4B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

199 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRG4PC40FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

160 W

49 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

690 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

46 ns

IGW100N60H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

714 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

72 ns

IGB50N65H5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

223 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

52 ns

IRGP4790PBF

Infineon Technologies

N-Channel

SINGLE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

160 ns

IRG4MC50FPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRG4PC50K

Infineon Technologies

N-CHANNEL

SINGLE

NO

52 A

PLASTIC/EPOXY

MOTOR CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

120 ns

430 ns

3

FLANGE MOUNT

200 W

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

72 ns

IRG7CH28UEF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.55 V

NO LEAD

SQUARE

1

390 ns

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

30 V

6 V

UPPER

S-XUUC-N2

50 ns

IRG7CH44K10EF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.63 V

NO LEAD

SQUARE

1

475 ns

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

30 V

7.5 V

UPPER

S-XUUC-N2

100 ns

SGW25N120

Infineon Technologies

N-CHANNEL

SINGLE

NO

313 W

46 A

PLASTIC/EPOXY

POWER CONTROL

25 ns

THROUGH-HOLE

RECTANGULAR

1

31 ns

862 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

86 ns

IRG4PC60F-PPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

e3

105 ns

IRG4CH50UB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

UPPER

O-XUUC-N

1

Not Qualified

ULTRA FAST SPEED

IRG4RC10U

Infineon Technologies

N-CHANNEL

SINGLE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

330 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-252AA

e0

30

240

32 ns

IRG4CC10SB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

STANDARD SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4CC30SB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

STANDARD SPEED

e0

IRG4IBC30W

Infineon Technologies

N-CHANNEL

SINGLE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

IRGP4066PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

310 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRG4CC50SB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

STANDARD SPEED

e0

IRG4BAC50U

Infineon Technologies

N-CHANNEL

SINGLE

NO

780 W

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-273AA

e3

54 ns

SGP20N60HSXKSA1

Infineon Technologies

N-CHANNEL

SINGLE

NO

36 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

235 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

30 ns

IRG4IBC30WPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

45 W

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

41 ns

IRG4PC30F

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

640 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4BAC50SPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1700 ns

3

IN-LINE

150 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-273AA

NOT SPECIFIED

NOT SPECIFIED

62 ns

AUIRG4BC30S-SL

Infineon Technologies

N-CHANNEL

SINGLE

NO

100 W

34 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

590 ns

1550 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRGP4760PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

130 ns

IRG4CC30FB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

R-XUUC-N2

Not Qualified

FAST SPEED

e0

IRG4PF50W-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

51 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

SILICON

900 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

54 ns

IGP15N60T

Infineon Technologies

N-CHANNEL

SINGLE

NO

130 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e3

32 ns

IRG4CC20MB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGB8B60K

Infineon Technologies

N-CHANNEL

SINGLE

NO

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRG4BC30U

Infineon Technologies

N-CHANNEL

SINGLE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

33 ns

IRG4PC60UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

520 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

78 ns

IGW25N120H3

Infineon Technologies

N-CHANNEL

SINGLE

NO

326 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

397 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

61 ns

IRG4MC50F

Infineon Technologies

N-CHANNEL

SINGLE

NO

150 W

35 A

UNSPECIFIED

POWER CONTROL

25 ns

PIN/PEG

SQUARE

1

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRGPS40B120UP

Infineon Technologies

N-CHANNEL

SINGLE

NO

595 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

55 ns

THROUGH-HOLE

RECTANGULAR

1

33 ns

357 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

115 ns

IRG4RC10KTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

9 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

417 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

38 ns

AUIRGS30B60KTRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

370 W

78 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

GULL WING

RECTANGULAR

1

42 ns

237 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

74 ns

IGP40N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

34 ns

IRG4PC60F

Infineon Technologies

N-CHANNEL

SINGLE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

105 ns

IRGP20B120U-EP

Infineon Technologies

N-CHANNEL

SINGLE

NO

300 W

40 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

THROUGH-HOLE

RECTANGULAR

1

35 ns

228 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

70 ns

IRG4CH50KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

1200 V

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

NOT SPECIFIED

NOT SPECIFIED

IRG4BC30K

Infineon Technologies

N-CHANNEL

SINGLE

NO

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

54 ns

IRG4CC40KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

600 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

ULTRA FAST SPEED

e0

IRG7PH46UPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

469 W

117 A

PLASTIC/EPOXY

POWER CONTROL

55 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

80 ns

IRG7S319UTRR

Infineon Technologies

N-CHANNEL

SINGLE

YES

45 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

298 ns

2

SMALL OUTLINE

SILICON

330 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e0

41 ns

IRG4RC10KTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

9 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

417 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

TO-252AA

e3

38 ns

IRGPC20F-E

Infineon Technologies

N-CHANNEL

SINGLE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

810 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e0

43 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.