Infineon Technologies - IRG4PC60F

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 284 ns;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Case Connection: COLLECTOR; No. of Terminals: 3;

FF450R17ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V, max current of 600A, and turn off time of 1600ns. Ideal for power control applications due to its high operating temperature of 175°C and fast turn on time of 380ns.

IKB40N65EH5ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 74A. It is designed for power control applications, featuring a built-in diode, small outline package style, and operating temperature range from -40 to 175 °C.

FF300R12ME4PB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.1V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1200V and operating temperature range from -40 to 150 °C, this RECTANGULAR package transistor offers efficient performance in various power control systems.

IRG4PH40UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Collector Current of 41A. It is used for POWER CONTROL applications, featuring a Nominal Turn Off Time of 750ns and Max Power Dissipation of 65W.

FGAF40N60UFTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 100W Ptot. Ideal for POWER CONTROL applications due to its fast switching times (ton: 67ns, toff: 190ns) and high operating temperature of 150°C. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 105 A; Terminal Position: SINGLE;

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;

Infineon Technologies' FF650R17IE4DB2BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It offers VCEsat of 2.45V, IC of 930A, and Pmax of 4150W. Ideal for power control applications due to its high voltage rating (1700V) and fast switching times (ton:765ns, toff:1870ns).

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 7; Maximum Gate-Emitter Voltage: 20 V;

Littelfuse IXXX200N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 380A IC, and 1.7V VCE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast switching times (ton:140ns, toff:395ns). Suitable for various industrial uses requiring efficient power management in a single configuration package.

IXXN110N65C4H1 by Littelfuse is an N-CHANNEL IGBT with 650V VCEsat, 210A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.

Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Fall Time (tf): 41 ns; Maximum Operating Temperature: 175 Cel;

FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.

FF450R12ME3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 600A, and turn-off time of 810ns. Ideal for applications requiring high power switching in industrial automation and renewable energy systems.

Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.

FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;