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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | GT20G101 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY; |
| Datasheet | GT20G101 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 20 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 500 ns |
| Transistor Application: | GENERAL PURPOSE SWITCHING |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 60 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 60 W |
| Maximum Fall Time (tf): | 6000 ns |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 400 V |
| Maximum Gate-Emitter Voltage: | 25 V |
| Maximum VCEsat: | 8 V |
