STMicroelectronics - STGW60H65DFB

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STGW60H65DFB by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STGW60H65DFB
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
Datasheet STGW60H65DFB Datasheet
In Stock407
NAME DESCRIPTION
Maximum Collector Current (IC): 80 A
Maximum Power Dissipation (Abs): 375 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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