Infineon Technologies - IKD15N60RFATMA1

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IKD15N60RFATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKD15N60RFATMA1
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; Terminal Finish: TIN; Maximum Gate-Emitter Threshold Voltage: 5.7 V;
Datasheet IKD15N60RFATMA1 Datasheet
In Stock6,548
NAME DESCRIPTION
Other Names: IKD15N60RF
IKD15N60RFATMA1TR
IKD15N60RF-TR-ND
IKD15N60RFATMA1DKR
IKD15N60RF-CT-ND
2156-IKD15N60RFATMA1
IKD15N60RF-TR
IKD15N60RF-CT
IKD15N60RFATMA1CT
SP000939368
IKD15N60RF-DKR
IKD15N60RF-DKR-ND
INFINFIKD15N60RFATMA1
Maximum Collector Current (IC): 30 A
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Moisture Sensitivity Level (MSL): 1
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