GT50J122 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	GT50J122
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 50 A; JESD-30 Code: R-PSFM-T3;
Datasheet	GT50J122 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	50 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
Nominal Turn Off Time (toff):	410 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	156 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	230 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	260 ns
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	HIGH SPEED
Maximum Gate-Emitter Voltage:	25 V

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