Toshiba - GT40M101

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GT40M101 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT40M101
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Maximum Collector Current (IC): 40 A; Maximum Gate-Emitter Threshold Voltage: 6 V;
Datasheet GT40M101 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 40 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 600 ns
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 90 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 90 W
Maximum Fall Time (tf): 400 ns
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 900 V
Additional Features: HIGH SPEED
Maximum Gate-Emitter Voltage: 25 V
Maximum VCEsat: 3.7 V
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