Littelfuse - IXXP50N60B3

FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.

SKM100GB125DN by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 100A, and toff of 380ns. Ideal for POWER CONTROL applications, it operates up to 1200V at 150°C with UL RECOGNIZED standards compliance.

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;

IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.

IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

IXXH100N60B3 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 220A IC, and 830W power dissipation. Ideal for POWER CONTROL applications, it features a single configuration in a rectangular package with through-hole terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSFM-T3; Nominal Turn Off Time (toff): 435 ns;

Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.

IXGH24N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 50A max collector current, and 250W max power dissipation. Ideal for power control applications, it has a single configuration and operates at up to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Terminals: 3; Case Connection: COLLECTOR;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Maximum Operating Temperature: 150 Cel;

IKW15N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures durability in high-temp environments up to 175°C.

IXGH10N170A by IXYS Corp is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 10A. It is commonly used in motor control applications due to its fast nominal turn-off time of 240ns.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;

IRG4BC30U-SPBF by International Rectifier is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 23A max collector current. It has a power dissipation of 100W, turn-off time of 320ns, and operates at up to 150°C. Ideal for power control applications requiring fast switching speeds in surface-mount configurations.

IRGP4650D-EPBF by Infineon Technologies is an N-CHANNEL IGBT with 42ns rise time, 54ns fall time, and 268W power dissipation. It operates at a max temp of 175°C and has a collector-emitter voltage of 600V. Ideal for high-power applications requiring fast switching capabilities.

AIKW75N60CTXKSA1 by Infineon Technologies is an N-Channel IGBT with a max VCEsat of 2V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 365ns and ton of 69ns. The transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for high-power industrial systems.

BSM75GB120DN2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 3.2V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation of 625W and max operating temperature of 150°C.