SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IXGH20N100A3	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		1630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	162 ns
IXYH20N65B3	Littelfuse	N-CHANNEL	SINGLE	NO	230 W	58 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		271 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				39 ns
IXGT35N120B	Littelfuse	N-CHANNEL	SINGLE	YES	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	GULL WING	RECTANGULAR	1	320 ns	340 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	77 ns
IXYH40N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	600 W	105 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1		237 ns	3	FLANGE MOUNT			175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	81 ns
IXGH22N50C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	44 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		100 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGH120N30B3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1		164 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3	10	260	49 ns
IXGT24N170A	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	80 ns	275 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	98 ns
IXGH64N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	460 W	64 A	PLASTIC/EPOXY	POWER CONTROL	1.35 V	THROUGH-HOLE	RECTANGULAR	1		777 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	65 ns
IXGT40N120A2	Littelfuse	N-CHANNEL	SINGLE	YES		75 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		2300 ns	2	SMALL OUTLINE			150 Cel	SILICON	1200 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	55 ns
IXGH24N170A	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	24 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1	80 ns	275 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	98 ns
IXGH40N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	380 W	75 A	PLASTIC/EPOXY	MOTOR CONTROL	4.4 V	THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	52 ns
IXGH72N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	240 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	490 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	64 ns
IXYH20N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	278 W	40 A	PLASTIC/EPOXY	POWER CONTROL	3.4 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXYH55N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	650 W	175 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		910 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				54 ns
IXGT24N170	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	50 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	500 ns	560 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1700 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	105 ns
IXYH16N170C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	40 A	PLASTIC/EPOXY	POWER CONTROL	3.8 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				35 ns
IXYX120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	1500 W	320 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		826 ns	3	IN-LINE			175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR							84 ns
IXGH72N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	540 W	75 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	THROUGH-HOLE	RECTANGULAR	1	110 ns	132 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	240 ns	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	64 ns
IXYH30N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	100 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		480 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				57 ns
IXBF40N140	Littelfuse	N-CHANNEL	SINGLE	NO	250 W	28 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		340 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V		20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY, FAST SWITCHING		e1			260 ns
IXGH28N30A	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXYX140N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	310 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		300 ns	3	IN-LINE			175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V		SINGLE	R-PSIP-T3		COLLECTOR							122 ns
IXGH25N120	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	50 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		1920 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	200 W	150 Cel	SILICON	1200 V		20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	350 ns
IXGT4N250C	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	13 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		471 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260
MMIX1X340N65B4	Littelfuse	N-CHANNEL	SINGLE	YES	1200 W	450 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1		346 ns	21	SMALL OUTLINE			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		DUAL	R-PDSO-G21		ISOLATED		LOW CONDUCTION LOSS					119 ns
IXGT28N30B	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		90 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXYH30N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	270 W	60 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		120 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	59 ns
IXYH12N250C	Littelfuse	N-CHANNEL	SINGLE	NO	310 W	28 A	PLASTIC/EPOXY	POWER CONTROL	4.5 V	THROUGH-HOLE	RECTANGULAR	1		303 ns	3	FLANGE MOUNT			175 Cel	SILICON	2500 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				28 ns
IXGH35N120B	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	70 A	PLASTIC/EPOXY	POWER CONTROL	3.3 V	THROUGH-HOLE	RECTANGULAR	1	320 ns	340 ns	3	FLANGE MOUNT			150 Cel	SILICON	1200 V	-55 Cel	20 V	600 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				77 ns
IXGT15N100C	Littelfuse	N-CHANNEL	SINGLE	YES		30 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		430 ns	2	SMALL OUTLINE			150 Cel	SILICON	1000 V					PURE TIN	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified		TO-268AA				43 ns
IXGT64N60A3	Littelfuse	N-CHANNEL	SINGLE	YES		64 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		777 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-268AA	e3	10	260	65 ns
IXGT40N60B	Littelfuse	N-CHANNEL	SINGLE	YES	250 W	75 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		570 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	60 ns
IXXH60N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	536 W	145 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		208 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	94 ns
IXGH56N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	330 W	130 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	165 ns	250 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	67 ns
IXYH24N170C	Littelfuse	N-CHANNEL	SINGLE	NO	500 W	58 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1		336 ns	3	FLANGE MOUNT			175 Cel	SILICON	1700 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				47 ns
IXGH20N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1	700 ns	630 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V	-55 Cel	20 V	1400 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	60 ns
IXYH75N120B4	Littelfuse	N-CHANNEL	SINGLE	NO	1150 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				64 ns
IXGH15N100C	Littelfuse	N-CHANNEL	SINGLE	NO		30 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		430 ns	3	FLANGE MOUNT			150 Cel	SILICON	1000 V					MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	43 ns
IXGH60N30C3	Littelfuse	N-CHANNEL	SINGLE	NO	300 W	75 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		221 ns	3	FLANGE MOUNT			150 Cel	SILICON	300 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	50 ns
IXXH140N65C4	Littelfuse	N-CHANNEL	SINGLE	NO	1200 W	320 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		290 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				133 ns
IXGH32N50B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	150 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	25 ns
IXGH4N250C	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	13 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		471 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	2500 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247	e3	10	260
IXGH28N30B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		90 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGH28N30BS	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		90 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-G2		COLLECTOR	Not Qualified	FAST		e3	10	260	15 ns
IXGT31N60	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	60 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	800 ns	800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-268AA	e3	10	260	15 ns
IXBF9N140G	Littelfuse	N-CHANNEL	SINGLE	NO		7 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		190 ns	3	IN-LINE			150 Cel	SILICON	1400 V					TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			340 ns
IXXH60N65C4	Littelfuse	N-CHANNEL	SINGLE	NO	536 W	135 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	THROUGH-HOLE	RECTANGULAR	1		164 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	110 ns
IXYH40N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	577 W	90 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	THROUGH-HOLE	RECTANGULAR	1		303 ns	3	FLANGE MOUNT			175 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	95 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.