GT25J102 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	GT25J102
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 25 A; Additional Features: HIGH SPEED;
Datasheet	GT25J102 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	25 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage:	6 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	80 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	80 W
Maximum Fall Time (tf):	350 ns
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	HIGH SPEED
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	4 V

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