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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJP30E2DPP-M0-T2 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 35 A; Transistor Application: POWER CONTROL; |
| Datasheet | RJP30E2DPP-M0-T2 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 35 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 5 V |
| JEDEC-95 Code: | TO-220AB |
| Sub-Category: | Insulated Gate BIP Transistors |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 230 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 25 W |
| Maximum Collector-Emitter Voltage: | 360 V |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 130 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 30 V |
| Case Connection: | ISOLATED |
