SGD06N60 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SGD06N60
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 67 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	SGD06N60 Datasheet
In Stock	928

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	12 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	24 ns
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	YES
Nominal Turn Off Time (toff):	318 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	67 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	41 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	65 ns
Moisture Sensitivity Level (MSL):	3
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
928	-	-

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