IGW30N60TP by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IGW30N60TP
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 53 A; Maximum VCEsat: 1.8 V;
Datasheet	IGW30N60TP Datasheet
In Stock	715

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	53 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.7 V
Surface Mount:	NO
Terminal Finish:	TIN
Nominal Turn Off Time (toff):	279 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	38 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	1.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
715	$6.580	$4,704.700

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