Infineon Technologies - SIGC81T120R2CS

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SIGC81T120R2CS by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC81T120R2CS
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Qualification: Not Qualified; Additional Features: INTEGRATED GATE RESISTOR;
Datasheet SIGC81T120R2CS Datasheet
In Stock807
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 10
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N10
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Additional Features: INTEGRATED GATE RESISTOR
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
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