Infineon Technologies - SIGC10T60

  1. Home
  2. Infineon Technologies - SIGC10T60
SIGC10T60 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC10T60
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Terminal Position: UPPER; Package Shape: RECTANGULAR;
Datasheet SIGC10T60 Datasheet
In Stock462
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 20 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
462 - -

Popular Products

Category Top Products

HGTG20N60B3D by Harris Semiconductor

HGTG20N60B3D

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 40 A; No. of Terminals: 3;
ISL9V2040D3ST by Onsemi

ISL9V2040D3ST

Onsemi

ISL9V2040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 390V and can handle a max collector current of 10A. This IGBT comes in a small outline package style with gull wing terminals for surface mount assembly.
IKW50N60TAFKSA1 by Infineon Technologies

IKW50N60TAFKSA1

Infineon Technologies

IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
HGTG12N60A4D by Fairchild Semiconductor

HGTG12N60A4D

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 54 A; Package Shape: RECTANGULAR;
IKW40N60H3FKSA1 by Infineon Technologies

IKW40N60H3FKSA1

Infineon Technologies

IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
FGPF10N60UNDF by Onsemi

FGPF10N60UNDF

Onsemi

FGPF10N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 20A max collector current, and 42W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.
FS75R12KT3BOSA1 by Infineon Technologies

FS75R12KT3BOSA1

Infineon Technologies

Infineon FS75R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn-off time of 610ns. Ideal for applications requiring high power efficiency in industrial systems like motor drives and renewable energy converters.
NXH450B100H4Q2F2PG-R by Onsemi

NXH450B100H4Q2F2PG-R

Onsemi

Insulated Gate Bipolar Transistors;
SGL160N60UFDTU by Fairchild Semiconductor

SGL160N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 160 A; Terminal Position: SINGLE;
IKD15N60RATMA1 by Infineon Technologies

IKD15N60RATMA1

Infineon Technologies

IKD15N60RATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 30A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 430ns. Suitable for surface mount with gull wing terminals in a small outline package shape.
IXBH10N170 by Littelfuse

IXBH10N170

Littelfuse

IXBH10N170 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 3.8V, IC of 20A, and VCE of 1700V. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Operates b/w -55 to 150 °C with a power dissipation of 140W in a rectangular package style.
APT150GN60JDQ4 by Advanced Power Technology

APT150GN60JDQ4

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 220 A; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;
SKM150GB12T4G by Semikron International

SKM150GB12T4G

Semikron International

SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
APT200GN60J by Microchip Technology

APT200GN60J

Microchip Technology

APT200GN60J by Microchip Technology is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 250A max collector current. It has a power dissipation of 682W, turn-off time of 1210ns, and turn-on time of 75ns. Ideal for power control applications requiring high voltage and current handling capabilities.
FP15R12KT3BOSA1 by Infineon Technologies

FP15R12KT3BOSA1

Infineon Technologies

FP15R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 25A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
FS25R12YT3 by Infineon Technologies

FS25R12YT3

Infineon Technologies

Infineon FS25R12YT3 is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 40A, and Pmax of 165W. Ideal for high-power applications like motor drives due to its fast turn-off time (toff) of 640ns and turn-on time (ton) of 120ns in a RECTANGULAR package style.
FS50R06W1E3BOMA1 by Infineon Technologies

FS50R06W1E3BOMA1

Infineon Technologies

Infineon's FS50R06W1E3BOMA1 is an N-CHANNEL IGBT with 6 elements, max. collector current of 70A, and turn off time of 370ns. Ideal for power control applications, it operates at up to 175°C with a max. collector-emitter voltage of 600V in a rectangular package style.
IXXX160N65B4 by Littelfuse

IXXX160N65B4

Littelfuse

IXXX160N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 310A IC, and 1.8V VCEsat. Ideal for POWER CONTROL applications, it has a TOFF of 380ns and TON of 93ns. Suitable for high-power systems requiring efficient switching capabilities.
STGWA40H60DLFB by STMicroelectronics

STGWA40H60DLFB

STMicroelectronics

STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.
IXYP20N65C3D1M by IXYS Corporation

IXYP20N65C3D1M

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT;