IRGIH50FU by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRGIH50FU
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 45 A; No. of Terminals: 3;
Datasheet	IRGIH50FU Datasheet
In Stock	168

NAME	DESCRIPTION
Package Body Material:	METAL
Maximum Collector Current (IC):	45 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6 V
JEDEC-95 Code:	TO-259AA
Sub-Category:	Insulated Gate BIP Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	200 W
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-MSFM-P3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Additional Features:	FAST
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
168	-	-

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RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;

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Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;