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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRG8CH76K10F |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; |
| Datasheet | IRG8CH76K10F Datasheet |
| In Stock | 786 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -40 Cel |
| Nominal Turn Off Time (toff): | 555 ns |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UNSPECIFIED |
| Nominal Turn On Time (ton): | 100 ns |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XXUC-N |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Gate-Emitter Voltage: | 30 V |
| Maximum VCEsat: | 2 V |









