
Image shown is a representation only.
Manufacturer | Advanced Power Technology |
---|---|
Manufacturer's Part Number | APT45GP120J |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Package Shape: RECTANGULAR; |
Datasheet | APT45GP120J Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 75 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 230 ns |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 329 W |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 47 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PUFM-X4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Polarity or Channel Type: | N-CHANNEL |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 1200 V |
Additional Features: | LOW CONDUCTION LOSS |
Maximum Gate-Emitter Voltage: | 20 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |