SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGP30NC60W

STMicroelectronics

N-CHANNEL

SINGLE

NO

200 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

42.5 ns

STGP7NB60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

14 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

21 ns

STGB40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

YES

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

202 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

BULK: 1000

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGF7NB60SL

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

8100 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

2.4 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

1350 ns

STGP10NB60SFP

STMicroelectronics

N-CHANNEL

SINGLE

NO

31.5 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

1160 ns

STGB10NB60S

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

1160 ns

STGP8NC60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

65 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

242 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

23 ns

STGB10NB60ST4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

29 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

3100 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

1160 ns

STGP7NB60M

STMicroelectronics

N-CHANNEL

SINGLE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

19 ns

STGWT30H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGB20H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

YES

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

178 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

26 ns

STGD3NB60H

STMicroelectronics

N-CHANNEL

SINGLE

YES

35 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

168 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-252AA

e3

46 ns

STGD6NC60HT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

56 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

222 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

17.3 ns

STGB50H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

YES

272 W

86 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

225 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

41 ns

STGP12NB60K

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

39.5 ns

BUK854-800A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

150 Cel

SILICON

800 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

50 ns

BUK854-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

800 ns

200 ns

3

FLANGE MOUNT

85 W

150 Cel

SILICON

800 V

30 V

350 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

50 ns

BUK856-800A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

800 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

70 ns

BUK856-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

800 ns

300 ns

3

FLANGE MOUNT

125 W

150 Cel

SILICON

800 V

30 V

450 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

70 ns

BUK854-500IS

NXP Semiconductors

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3500 ns

3

FLANGE MOUNT

85 W

150 Cel

SILICON

500 V

30 V

4500 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

IGC70T120T6RMX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRGSL8B60KPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

26 ns

THROUGH-HOLE

RECTANGULAR

1

56 ns

220 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262AA

e3

43 ns

IRGC50B60KBPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

UNCASED CHIP

SILICON

600 V

UPPER

O-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

BUP314S

Infineon Technologies

N-CHANNEL

SINGLE

NO

300 W

25 A

PLASTIC/EPOXY

MOTOR CONTROL

90 ns

THROUGH-HOLE

RECTANGULAR

1

95 ns

490 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-218AB

e0

125 ns

IGC19T65QEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.32 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC168T170S8RHX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

10

UNCASED CHIP

175 Cel

SILICON

1700 V

UPPER

R-XUUC-N10

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

OM6526SAV

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

500 ns

3

FLANGE MOUNT

SILICON

1000 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-254AA

e0

250 ns

IGC07T120T6LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUP314

Infineon Technologies

N-CHANNEL

SINGLE

NO

300 W

52 A

PLASTIC/EPOXY

MOTOR CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

60 ns

420 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-218

e3

75 ns

IGC109T120T6RMX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

110 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

4

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC07T120T8LX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

2.02 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGW60T120

Infineon Technologies

N-CHANNEL

SINGLE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

730 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

95 ns

IRGS4065TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

560 ns

2

SMALL OUTLINE

SILICON

300 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

58 ns

IRGAC40F

Infineon Technologies

N-CHANNEL

SINGLE

NO

38 A

METAL

PIN/PEG

ROUND

1

2

FLANGE MOUNT

SILICON

600 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

FAST

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IGA03N120H2

Infineon Technologies

N-CHANNEL

SINGLE

NO

3 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

16.1 ns

IRGMC40FDPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

35 A

UNSPECIFIED

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

S-XSFM-P3

ISOLATED

FAST

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

AIGW40N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

203 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

31 ns

AEC-Q101

IRGC5B120KB

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

MOTOR CONTROL

NO LEAD

ROUND

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

6 V

TIN LEAD

UPPER

O-XUUC-N

Not Qualified

e0

IGC142T120T6RHX1SA3

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

8

UNCASED CHIP

175 Cel

SILICON

1200 V

UPPER

R-XUUC-N8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IGC193T120T8RMX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.05 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

IGB15N60T

Infineon Technologies

N-CHANNEL

SINGLE

YES

130 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

291 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

245

32 ns

IGC39T65QEX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.22 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

5.6 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

IRG6S320UTRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

42 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

270 ns

2

SMALL OUTLINE

SILICON

330 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

TO-263AB

75 ns

IGZ50N65H5

Infineon Technologies

N-CHANNEL

SINGLE

NO

273 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

311 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

27 ns

IRGS4055TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

70 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

671 ns

2

SMALL OUTLINE

SILICON

300 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

82 ns

OM6506SAT

Infineon Technologies

N-CHANNEL

SINGLE

NO

20 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

1000 ns

3

FLANGE MOUNT

SILICON

500 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

100 ns

IRGS30B60K

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

237 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

74 ns

IRGCH20SE

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

SILICON

1200 V

5.5 V

UPPER

R-XUUC-N2

Not Qualified

STANDARD SPEED

40

260

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.