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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STGB50H65FB2 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Collector Current (IC): 86 A; Case Connection: COLLECTOR; |
| Datasheet | STGB50H65FB2 Datasheet |
| In Stock | 201 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 86 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Surface Mount: | YES |
| Nominal Turn Off Time (toff): | 225 ns |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 272 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 41 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 650 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2 V |
