SINGLE Insulated Gate Bipolar Transistors (IGBT) 2,203

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

AFGHL75T65SQ

Onsemi

N-CHANNEL

SINGLE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

70 ns

AEC-Q101

HGTG10N120BN

Onsemi

N-CHANNEL

SINGLE

NO

298 W

35 A

PLASTIC/EPOXY

MOTOR CONTROL

15 ns

4.2 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

330 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

450 ns

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247

32 ns

HGTG11N120CN

Onsemi

N-CHANNEL

SINGLE

NO

298 W

43 A

PLASTIC/EPOXY

POWER CONTROL

16 ns

2.4 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

550 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

40 ns

-55 Cel

20 V

680 ns

SINGLE

R-PSFM-T3

COLLECTOR

AVALANCHE RATED, LOW CONDUCTION LOSS

TO-247

33 ns

HGTG7N60A4

Onsemi

N-CHANNEL

SINGLE

NO

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

85 ns

205 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

17 ns

FGH40N120AN

Onsemi

N-CHANNEL

SINGLE

NO

64 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

45 ns

HGTG20N60A4

Onsemi

N-CHANNEL

SINGLE

NO

290 W

70 A

PLASTIC/EPOXY

POWER CONTROL

18 ns

THROUGH-HOLE

RECTANGULAR

1

73 ns

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

28 ns

HGTG20N60B3

Onsemi

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

45 ns

HGTG12N60A4

Onsemi

N-CHANNEL

SINGLE

NO

167 W

54 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

95 ns

180 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

33 ns

HGTG20N60C3

Onsemi

N-CHANNEL

SINGLE

NO

164 W

45 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

1.8 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

388 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

660 ns

6.3 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

52 ns

SGP23N60UF

Onsemi

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

TO-220AB

55 ns

NGTG35N65FL2WG

Onsemi

N-CHANNEL

SINGLE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

FLANGE MOUNT

SILICON

650 V

MATTE TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

TO-247

e3

30

260

108 ns

FGB20N60SF

Onsemi

N-CHANNEL

SINGLE

YES

208 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

48 ns

123 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

28 ns

HGTG18N120BN

Onsemi

N-CHANNEL

SINGLE

NO

54 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

345 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, AVALANCHE RATED

TO-247

e3

38 ns

FGA180N33ATTU

Onsemi

N-CHANNEL

SINGLE

NO

180 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

362 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

101 ns

SGP23N60UFTU

Onsemi

N-CHANNEL

SINGLE

NO

100 W

23 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

TO-220AB

e3

55 ns

STG75M120F3D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.7 V

NO LEAD

RECTANGULAR

1

397 ns

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

217 ns

STG40M120F3D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.8 V

NO LEAD

RECTANGULAR

1

390 ns

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

53 ns

STG20M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

20 A

UNSPECIFIED

POWER CONTROL

2.1 V

NO LEAD

RECTANGULAR

1

252 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

39.6 ns

STG35M120F3D8

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

142.84 ns

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

145 ns

STG75M120F3D8

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.7 V

NO LEAD

RECTANGULAR

1

397 ns

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

217 ns

STG15M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

UNSPECIFIED

POWER CONTROL

2.2 V

NO LEAD

SQUARE

1

265 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

S-XUUC-N2

34 ns

STG25M120F3D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

395 ns

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

45 ns

STG30M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

30 A

UNSPECIFIED

POWER CONTROL

1.9 V

NO LEAD

RECTANGULAR

1

310 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

47 ns

STHI07N50

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

7 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

800 ns

STHI10N50

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

800 ns

STG25H120F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

25 A

UNSPECIFIED

POWER CONTROL

2.6 V

NO LEAD

RECTANGULAR

1

236 ns

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

40.5 ns

STHI10N50FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

800 ns

STG50M65F2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

1.5 V

NO LEAD

RECTANGULAR

1

315 ns

3

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N3

66 ns

STG8M120F3D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.4 V

NO LEAD

SQUARE

1

356 ns

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

UPPER

S-XUUC-N2

28.8 ns

STG200M65F2D8AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

200 A

UNSPECIFIED

POWER CONTROL

2.3 V

NO LEAD

RECTANGULAR

1

168 ns

9

UNCASED CHIP

175 Cel

SILICON

650 V

-40 Cel

20 V

7 V

UPPER

R-XUUC-N9

205 ns

AEC-Q101

STHI07N50FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

7 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

1300 ns

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

500 V

TIN LEAD

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

800 ns

STG40H65FB2D7

STMicroelectronics

N-CHANNEL

SINGLE

YES

40 A

UNSPECIFIED

POWER CONTROL

2 V

NO LEAD

RECTANGULAR

1

148.5 ns

2

UNCASED CHIP

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

UPPER

R-XUUC-N2

71.8 ns

STGD3NC120H-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

105 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

342 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

NOT SPECIFIED

NOT SPECIFIED

18.5 ns

STGP20H65FB2

STMicroelectronics

N-CHANNEL

SINGLE

NO

147 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

178 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

26 ns

STGW30NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

190 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

90 ns

STGW40V60F

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGB8NC60K

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

23 ns

STGD7NB60MT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

70 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

670 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e0

19 ns

STGD7NB60FT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

70 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

505 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e0

23 ns

STGD8NC60KTRL

STMicroelectronics

N-CHANNEL

SINGLE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN

DUAL

R-PDSO-G2

1

Not Qualified

e3

23 ns

STGB18N40LZT4TRL

STMicroelectronics

N-CHANNEL

SINGLE

YES

30 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

24800 ns

2

SMALL OUTLINE

175 Cel

SILICON

MATTE TIN

SINGLE

R-PSSO-G2

1

Not Qualified

e3

6900 ns

STGD7NB60F

STMicroelectronics

N-CHANNEL

SINGLE

YES

70 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

505 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

e3

23 ns

STGW30H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGWA40H65FB

STMicroelectronics

N-CHANNEL

SINGLE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

52 ns

STGD14NC60KT4

STMicroelectronics

N-CHANNEL

SINGLE

YES

80 W

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

340 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Matte Tin (Sn)

DUAL

R-PDSO-G2

1

Not Qualified

e3

31.5 ns

STGW50H65F

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

STGD7NC60H

STMicroelectronics

N-CHANNEL

SINGLE

YES

25 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

221 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

25.5 ns

STGD7NB60H

STMicroelectronics

N-CHANNEL

SINGLE

YES

55 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

220 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252AA

e3

63 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.