Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | HGTG11N120CN |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Case Connection: COLLECTOR; |
| Datasheet | HGTG11N120CN Datasheet |
| In Stock | 2,838 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 43 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Rise Time (tr): | 16 ns |
| Transistor Application: | POWER CONTROL |
| Maximum Turn On Time (ton): | 40 ns |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 550 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 298 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 33 ns |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 680 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Fall Time (tf): | 400 ns |
| JEDEC-95 Code: | TO-247 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Additional Features: | AVALANCHE RATED, LOW CONDUCTION LOSS |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2.4 V |
