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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STG30M65F2D7 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Transistor Element Material: SILICON; |
| Datasheet | STG30M65F2D7 Datasheet |
| In Stock | 4,270 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 30 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| Nominal Turn Off Time (toff): | 310 ns |
| No. of Terminals: | 2 |
| Maximum Collector-Emitter Voltage: | 650 V |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 47 ns |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 1.9 V |









